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| (R) ESDALC6V1P5 QUAD LOW CAPACITANCE TRANSILTM ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D. MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers Communication systems and cellular phones Video equipment This device is particularly adapted to the protection of symmetrical signals. FEATURES 4 UNIDIRECTIONAL TRANSILTM FUNCTIONS. BREAKDOWN VOLTAGE VBR = 6.1V MIN. LOW DIODE CAPACITANCE (12pF @ 0V) LOW LEAKAGE CURRENT < 100 nA VERY SMALL PCB AREA < 2.6 mm2 SOT665 (Jedec SC89-5L) FUNCTIONAL DIAGRAM DESCRIPTION The ESDALC6V1P5 is a monolithic array designed to protect up to 4 lines against ESD transients. This device is ideal for applications where both reduced line capacitance and board space saving are required. BENEFITS High ESD protection level. High integration. Suitable for high density boards. 1 2 3 5 4 ESD response to IEC61000-4-2 level 4 (15kV contact) COMPLIES WITH THE FOLLOWING STANDARDS : IEC61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883E-Method 3015-7: class 3 25kV HBM (Human Body Model) February 2004 - Ed: 1 1/5 ESDALC6V1P5 ABSOLUTE RATINGS (Tamb = 25C) Symbol VPP PPP Tj Tstg TL Top Parameter Test conditions Value 15 8 30 125 - 55 to + 150 260 - 40 to + 125 Unit kV W C C C C ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge Peak pulse power (8/20 s) (see note 1) Junction temperature Storage temperature range Maximum lead temperature for soldering during 10s at N/A Operating temperature range Tj initial = Tamb Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth(j-a) Parameter Junction to ambient on printed circuit on recommended pad layout Value 220 Unit C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP T VF C Rd Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage tempature coefficient Forward voltage drop Capacitance per line Dynamic resistance Slope: 1/Rd IPP VCL VBR VRM IRM VF V IF I VBR min. Types @ max. IR IRM max. @ VRM Rd typ. T max. C typ. @ 0V V ESDALC6V1P5 6.1 V 7.2 mA 1 A 0.1 V 3 1.5 10-4/C 4.5 pF 12 2/5 ESDALC6V1P5 Fig. 1: Relative variation of peak pulse power versus initial junction temperature. PPP[Tj initial] / PPP[Tj initial=25C) Fig. 2: Peak pulse power versus exponential pulse duration. PPP(W) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Tj(C) 1000 Tj initial=25C 100 Tp(s) 10 1 10 100 Fig. 3: Clamping voltage versus peak pulse current (typical values, rectangular waveform). IPP(A) Fig. 4: Forward voltage drop versus peak forward current (typical values). IFM(A) 100.0 tp=2.5s Tj initial=25C 1.E+00 Tj=125C 10.0 1.E-01 Tj=25C 1.0 1.E-02 VCL(V) VFM(V) 0.1 0 10 20 30 40 50 60 70 1.E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 5: Junction capacitance versus reverse voltage applied (typical values). C(pF) Fig. 6: Relative variation of leakage current versus junction temperature (typical values). IR[Tj] / IR[Tj=25C] 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 VR(V) F=1MHz VOSC=30mVRMS Tj=25C 1000 VR=3V 100 10 Tj(C) 1 25 50 75 100 125 3/5 ESDALC6V1P5 ORDER CODE ESDA LC 6V1 P5 ESD ARRAY VBR min LOW CAPACITANCE PACKAGE: SOT665 Ordering type ESDALC6V1P5 Marking A1 Package SOT665 Weight 2.9 mg. Base qty 3000 Delivery mode Tape & reel 4/5 ESDALC6V1P5 PACKAGE MECHANICAL DATA SOT-665 DIMENSIONS REF. bp Millimeters Min. Max. 0.60 0.27 0.18 1.70 1.30 1.00 0.50 1.50 0.10 1.70 0.30 Inches Min. 0.020 0.007 0.003 0.060 0.043 Max. 0.024 0.011 0.007 0.067 0.051 A D E 0.50 0.17 0.08 1.50 1.10 bp c Lp U A D E e e1 He He 0.040 0.020 0.059 0.004 0.067 0.012 e1 e Lp FOOT PRINT (in millimeters) 0.5 1.16 0.43 0.3 REEL ORIENTATION A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5 2.75 |
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